SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CMOS TYPE REGULATOR AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device reducing the variation of on-resistance while preventing the increase of a manufacturing cost and a manufacturing method for the semiconductor device. SOLUTION: A p-type body 5 is formed on one side of a drift region 11 contained in an n-type semiconductor substrate 1, and an n+-type source diffusion region 7S is formed on the body 5. An n+-type drain diffusion region 7D is formed on the other side of the drift region 11. A gate electrode 14 is formed on the drift region 11 through a gate oxide film 3. The gate electrode 14 is composed of a first gate electrode 4 and the first gate electrode 4 and a third gate electrode 6B. An end on the drift region 11 side of the body 5 is positioned near a boundary surface between the first gate electrode 4 and the second gate electrode 7S. COPYRIGHT: (C)2005,JPO&NCIPI