发明名称 TRANSPARENT CONDUCTIVE FILM, FORMING METHOD OF TRANSPARENT CONDUCTIVE FILM, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a transparent conductive film with a low resistance value with component elements hardly diffusing to a layer contacting it, a forming method of forming such a transparent conductive film, and an electronic device as well as an electronic apparatus of high reliability. SOLUTION: The transparent conductive film 8 is provided with a first layer 9 mainly of an inorganic oxide having conductivity, and a second layer 10 mainly of SiO<SB>2</SB>. The first layer 9 is provided with a porous film 91 composed of conductive particles 91a mainly of an inorganic oxide having conductivity, and a conductive matter 92 supplied for filling in gaps 91b the porous film 91 has. The conductive matter is preferred to be produced by having a conductive matter precursor transformed, and the SiO<SB>2</SB>is preferred to be produced by having an SiO<SB>2</SB>precursor transformed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005129420(A) 申请公布日期 2005.05.19
申请号 JP20030365262 申请日期 2003.10.24
申请人 SEIKO EPSON CORP 发明人 SATO MITSURU;KOIKE TAKASHI;SEKI SHINSUKE;MATSUSHITA AKIRA
分类号 B32B9/00;H01B5/14;H01B13/00;(IPC1-7):H01B5/14 主分类号 B32B9/00
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