| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device includes depositing a SiO<SUB>2 </SUB>film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO<SUB>2 </SUB>film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.
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| 申请公布号 |
US2005106874(A1) |
申请公布日期 |
2005.05.19 |
| 申请号 |
US20040935429 |
申请日期 |
2004.09.08 |
| 申请人 |
MATSUI YUKITERU;MINAMIHABA GAKU;YANO HIROYUKI;SHIGETA ATSUSHI |
发明人 |
MATSUI YUKITERU;MINAMIHABA GAKU;YANO HIROYUKI;SHIGETA ATSUSHI |
| 分类号 |
H01L21/304;C09G1/02;H01L21/302;H01L21/3105;H01L21/316;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/304 |
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