发明名称 Charged-particle multi-beam exposure apparatus
摘要 A charged-particle multi-beam exposure apparatus ( 1 ) for exposure of a target ( 41 ) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target ( 41 ). For each particle beam an illumination system ( 10 ), a pattern definition means ( 20 ) and a projection optics system ( 30 ) are provided. The illuminating system ( 10 ) and/or the projection optics system ( 30 ) comprise particle-optical lenses having lens elements (L 1 , L 2 , L 3 , L 4 , L 5 ) common to more than one particle beam. The pattern definition means ( 20 ) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target ( 41 ), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.
申请公布号 US2005104013(A1) 申请公布日期 2005.05.19
申请号 US20040969493 申请日期 2004.10.20
申请人 IMS NANOFABRICATION GMBH 发明人 STENGL GERHARD;PLATZGUMMER ELMAR;LOSCHNER HANS
分类号 G03F7/20;H01J37/317;H01L21/027;(IPC1-7):H01J37/08 主分类号 G03F7/20
代理机构 代理人
主权项
地址