| 摘要 |
<P>PROBLEM TO BE SOLVED: To transfer a line pattern to a positive photoresist by an exposure method using a phase shifting mask. <P>SOLUTION: The line pattern is transferred to a positive photoresist film formed on a wafer by lap-exposing transferring areas 2A and 2B to light. In the transferring areas 2A and 2B, light shielding patterns 3b (3b1, 3b2, and 3b3) and 3c (3c1, 3c2, and 3c3) are disposed with a light transmitting area for a background. Although the dimensions, shapes, and disposition of the light shielding patterns 3b (3b1, 3b2, and 3b3) and 3c (3c1, 3c2, and 3c3) upon which the transferring areas 2A and 2B are superimposed are identical, shifters 7a and 7b are disposed so that they may be inverted against each other. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
