Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers,申请号US19610115383-传众专利搜索

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发明名称	Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
摘要
申请公布号	US3222530(A)	申请公布日期	1965.12.07
申请号	US19610115383	申请日期	1961.06.07
申请人	PHILCO CORPORATION	发明人	KALHAMMER FRITZ R.
分类号	H01L31/00;H01L31/10	主分类号	H01L31/00
代理机构		代理人
主权项
地址

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