| 摘要 |
PROBLEM TO BE SOLVED: To selectively conduct the plasma etching to silicon nitride under the almost normal pressure for the processing object including silicon nitride and silicon oxide. SOLUTION: The process gas of the supply source 2 of a normal pressure plasma etching apparatus M is converted to the plasma gas within a plasma discharge space 1a, and this plasma is blown to a processing object W. The processing object W includes silicon nitride to be etched and silicon oxide not to be etched. The processing object W is heated with a heater 6 up to 90°C (desirably 100°C) to 200°C. COPYRIGHT: (C)2005,JPO&NCIPI
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