| 发明名称 |
Plasma processing apparatus and method |
| 摘要 |
A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.
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| 申请公布号 |
US2005106331(A1) |
申请公布日期 |
2005.05.19 |
| 申请号 |
US20040022812 |
申请日期 |
2004.12.28 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HIROSE NAOKI;INUJIMA TAKASHI;TAKAYAMA TORU |
| 分类号 |
H01L21/205;C23C16/26;C23C16/27;C23C16/34;C23C16/42;C23C16/50;C23C16/511;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H05H1/46 |
主分类号 |
H01L21/205 |
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