Semiconductor programmable device

摘要

A semiconductor programmable device is provided. The semiconductor programmable device comprises a P-type substrate, an N-well, an NMOS capacitor and a PMOS transistor. The N-well is formed in the P-type substrate. The NMOS capacitor is configured on the P-type substrate. The PMOS transistor is configured on the N-well. A source/drain of the PMOS transistor is electrically connected to a gate of the NMOS capacitor. A control voltage is applied to a gate of the PMOS transistor. A programming voltage is applied to the source/drain of the PMOS transistor. The programming voltage is large enough to cause a breakdown of a gate oxide layer of the NMOS capacitor. The gate oxide layer of the NMOS capacitor has a thickness identical to the gate oxide layer of the PMOS transistor.