发明名称 Method for reducing the temperature dependence of a capacitive sensor and a capacitive sensor construction
摘要 This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate ( 2 ), an insulating layer ( 5 ) is formed and connected to the micromechanical construction. According to the invention, the insulating layer ( 5 ) is formed to be thicker ( 14 ) in the support area ( 16 ) than in the other areas, or thinner ( 13 ) in the area of the electrode ( 8 ) than in the support area ( 16 ) of the sensor.
申请公布号 US2005105245(A1) 申请公布日期 2005.05.19
申请号 US20040503089 申请日期 2004.09.29
申请人 VTI TECHNOLOGIES OY 发明人 KUISMA HEIKKI;LAHDENPERA JUHA;MUTIKAINEN RISTO
分类号 G01L9/00;G01L19/04;G01P15/08;G01P15/125;(IPC1-7):H01G4/06 主分类号 G01L9/00
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