发明名称 |
AN ADVANCED TECHNIQUE FOR FORMING TRANSISTORS HAVING RAISED DRAIN AND SOURCE REGIONS WITH DIFFERENT HEIGHT |
摘要 |
<p>The height of epitaxially grown semiconductor regions in extremely scaled semiconductor devices may be adjusted individually for different device regions in that two or more epitaxial growth steps may be carried out, wherein an epitaxial growth mask selectively suppresses the formation of a semiconductor region in a specified device region. In other embodiments, a common epitaxial growth process may be used for two or more different device regions and subsequently a selective oxidation process may be performed on selected device regions so as to precisely reduce the height of the previously epitaxially grown semiconductor regions in the selected areas.</p> |
申请公布号 |
WO2005045924(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
WO2004US31038 |
申请日期 |
2004.09.17 |
申请人 |
ADVANCED MICRO DEVICES, INC.;VAN BENTUM, RALF;LUNING, SCOTT;KAMMLER, THORSTEN |
发明人 |
VAN BENTUM, RALF;LUNING, SCOTT;KAMMLER, THORSTEN |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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