| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of shrinking spaces among patterns and a manufacturing method for the semiconductor device. <P>SOLUTION: The semiconductor device has a first wiring layer 14a with a first lower end 17b, and a first upper end 17a projected from the first lower end 17b; and a second lower end 18b and a second upper end 18a projected from the second lower end section 18b. The second upper end 18a is faced at a first interval X to the first upper end 17a, and the second lower end 18b has the first lower end 17b, and a second wiring layer 14b faced at a second interval Y larger than the first interval X to the first lower end 17b. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
