发明名称 |
LIGHT RECEIVING/EMITTING DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method where a doping area of a desired depth is controlled and a desired light receiving/emitting device can easily be manufactured. <P>SOLUTION: The manufacturing method includes (a) a step where an insulation layer 22 is formed on a substrate 21 doped to be n-type or p-type, and a part of the insulation layer 22 is removed so that a predetermined portion of the substrate 21 is exposed; (b) a step where the exposed portion of the substrate 21 is applied with a dopant so that a photoelectric conversion is produced on a pn junction with the substrate 21, and a doping layer 26 doped into a counter polarity to the substrate 21 is formed by heat treatment; and (c) a step where a first electrode 28a and a second electrode 28b are formed on the substrate 21 so that the doping layer 26 is electrically connected. Whereby, The depth of the doping layer 26 having a polarity counter to the substrate 21 can be controlled inside the substrate 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005129928(A) |
申请公布日期 |
2005.05.19 |
申请号 |
JP20040301275 |
申请日期 |
2004.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE EUN-KYUNG;CHOI BYOUNG-IYONG;KIM SHUNEI |
分类号 |
H01L21/00;H01L31/0203;H01L31/0232;H01L31/10;H01L31/105;H01L31/107;H01L33/06;H01L33/34 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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