发明名称 LIGHT RECEIVING/EMITTING DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method where a doping area of a desired depth is controlled and a desired light receiving/emitting device can easily be manufactured. <P>SOLUTION: The manufacturing method includes (a) a step where an insulation layer 22 is formed on a substrate 21 doped to be n-type or p-type, and a part of the insulation layer 22 is removed so that a predetermined portion of the substrate 21 is exposed; (b) a step where the exposed portion of the substrate 21 is applied with a dopant so that a photoelectric conversion is produced on a pn junction with the substrate 21, and a doping layer 26 doped into a counter polarity to the substrate 21 is formed by heat treatment; and (c) a step where a first electrode 28a and a second electrode 28b are formed on the substrate 21 so that the doping layer 26 is electrically connected. Whereby, The depth of the doping layer 26 having a polarity counter to the substrate 21 can be controlled inside the substrate 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005129928(A) 申请公布日期 2005.05.19
申请号 JP20040301275 申请日期 2004.10.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE EUN-KYUNG;CHOI BYOUNG-IYONG;KIM SHUNEI
分类号 H01L21/00;H01L31/0203;H01L31/0232;H01L31/10;H01L31/105;H01L31/107;H01L33/06;H01L33/34 主分类号 H01L21/00
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