| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a CMOS image sensor wherein the LTO film is prevented from delamination by pad etching performed two times for changing the pad layout. <P>SOLUTION: The method for manufacturing a CMOS image sensor comprises a step of forming a passivation film (32) on a pad metal (31); a step of patterning the passivation film (32) by using a first pad mask for the exposure of the pad metal (31); a step of evaporating an oxide film (33) on the exposed part of the pad metal (31) and on the passivation film (32); a step of forming a color filter, a flattening film, and a microlens; a step of applying a microlens-protecting low temperature oxide film (35) on the whole of the structure; and a step of forming an open part in the pad metal (31) by selectively etching the low temperature film (35) and the oxide film (33), by means of a second pad mask which is smaller in area than the first pad mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
