| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can prevent defects in the market even if the check criterion is relaxed for the over erased cell in usual use and can be supplied as a reliable product. <P>SOLUTION: For a flash EEPROM, the check criterion for the over erased cells are made switchable for the check before the delivery and for the check in usual use after the delivery. More concretely, a switch circuit 35 is provided to switch the check criterion for the over erased cell before the delivery to a severer one than the check in usual use. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
