发明名称 |
MAGNETISM RAM AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a magnetism RAM with high reliability and its manufacturing method, since shift and kink of switching magnetic field due to floating magnetic field can be prevented. SOLUTION: The magnetism RAM comprises a switching device and an MTJ cell coupled to the switching device, wherein the MTJ cell comprises a pinned film equipped with a metal film and a magnetic film enclosing the metal film. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005129957(A) |
申请公布日期 |
2005.05.19 |
申请号 |
JP20040309450 |
申请日期 |
2004.10.25 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK SANG-JIN;KIM TAE-WAN;PARK WON-JUN;RI SHOGIN |
分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L27/115;H01L43/08;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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