发明名称 MAGNETISM RAM AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetism RAM with high reliability and its manufacturing method, since shift and kink of switching magnetic field due to floating magnetic field can be prevented. SOLUTION: The magnetism RAM comprises a switching device and an MTJ cell coupled to the switching device, wherein the MTJ cell comprises a pinned film equipped with a metal film and a magnetic film enclosing the metal film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005129957(A) 申请公布日期 2005.05.19
申请号 JP20040309450 申请日期 2004.10.25
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK SANG-JIN;KIM TAE-WAN;PARK WON-JUN;RI SHOGIN
分类号 H01L27/105;G11C11/15;H01L21/8246;H01L27/115;H01L43/08;(IPC1-7):H01L27/105 主分类号 H01L27/105
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