| 摘要 |
PROBLEM TO BE SOLVED: To provide high-quality, high-performance single crystal SiC which has a wide terrace and high smoothness and forms few micropipe defect, interface defect, etc., by controlling the film thickness of the single crystal SiC at growth. SOLUTION: In a method for growing the single crystal silicon carbide, a C atom-supplying substrate 17 for supplying carbon atoms is stacked on a single crystal SiC substrate 5 which serves as a seed crystal, an ultra-thin metallic Si melt layer 18 is interposed between the single crystal SiC substrate 5 and the C atom-supplying substrate 17, and heat-treatment is performed at a prescribed temperature of about≥1,400°C for a prescribed time to grow the single crystal SiC on the single crystal SiC substrate 5 which serves as the seed crystal through liquid phase epitaxial growth. As the C atom-supplying substrate 17, at least one substrate chosen from the group consisting of a carbon substrate, a porous SiC substrate, a sintered SiC substrate and an amorphous SiC substrate is used. A spacer 19 with a thickness of about≤50μm is installed between the single crystal SiC substrate 5 and the C atom-supplying substrate 17 to control the thickness of the single crystal SiC grown between the single crystal SiC substrate 5 and the C atom-supplying substrate 17. COPYRIGHT: (C)2005,JPO&NCIPI
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