| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, excellent in leak characteristics, electric charge retaining characteristics, and programming characteristics. SOLUTION: In the semiconductor device, bottom oxide films 6 are formed on respective silicon substrates 1 for a memory transistor forming region and a circumferential circuit transistor forming region; a nitride film 7 is formed on the bottom oxide film 6; a top oxide film 8 is formed on the nitride film 7; the top oxide film 8, the nitride film 7, and the bottom oxide film 6 in the circumferential circuit transistor forming region are removed; the surface of the silicon substrate 1 in the circumferential circuit transistor forming region is exposed; the silicon substrate 1 of the circumferential circuit transistor forming region and the top oxide film 8 in the memory transistor forming region are subjected to heat treatment in an atmosphere having nitrogen and oxygen; and a gate insulating film 10 is formed on the silicon substrate 1 for the circumferential transistor forming region. COPYRIGHT: (C)2005,JPO&NCIPI
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