发明名称 HEAT TREATMENT METHOD AND ITS DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment method for giving efficient and economical heat treatment to a number of wafers with high quality, and to provide its vertical or horizontal device suitable for the heat treatment method. SOLUTION: The individual wafers 2 are supported on a boat 3 in a vertically rising manner. The boat 3 on which the number of wafers 2 are aligned and supported in the vertically rising manner is arranged in a core pipe 11 of the vertical heat treatment device 1 in the horizontal direction and a material gas flow path 6 easy to pass therethrough is formed between the adjacent wafers 2, 2 in the vertical condition. Material gas is fed into the core pipe 11 in the vertical direction and the fed gas is put in contact with each wafer 2 in the vertical condition through the gas flow path 6 to form a uniform film thickness on the surface of the wafer. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005127537(A) 申请公布日期 2005.05.19
申请号 JP20030360667 申请日期 2003.10.21
申请人 SHINKU GIKEN:KK 发明人 NANBU TOSHIO;SHINOHARA MAKOTO
分类号 F27D3/12;F27B5/04;H01L21/31;H01L21/324;(IPC1-7):F27D3/12 主分类号 F27D3/12
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