发明名称 |
Crystal manufacturing method |
摘要 |
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.
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申请公布号 |
US2005106883(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040504527 |
申请日期 |
2004.08.16 |
申请人 |
SASAKI SHINICHI;NAKAMURA MASASHI;SATO KENJI |
发明人 |
SASAKI SHINICHI;NAKAMURA MASASHI;SATO KENJI |
分类号 |
C30B29/38;C30B25/02;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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