发明名称 Power amplifier device
摘要 The power amplifier device comprises one or more transistors ( 16 ) with an output electrode and on top of that a thin-film capacitor. The capacitor comprises a first conductive layer ( 18 ), that is also the output terminal of the transistor. It further comprises a first dielectric layer ( 20 ) and a second conductive layer ( 22 ), that is connected by at least one first connecting wire ( 30 ) to said first conductive layer ( 18 ). A second connecting wire ( 34 ) connects said second conductive layer ( 22 ) to an output terminal of the power amplification device ( 40 ). In this manner a parallel LC circuit is created, and it is designed such that said parallel LC circuit shows resonance at a harmonic of a frequency (2Fo, 3Fo, 4Fo, 5Fo and so on) amplified by said power amplifier.
申请公布号 US2005104679(A1) 申请公布日期 2005.05.19
申请号 US20040507992 申请日期 2004.09.16
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 BLEDNOV IGOR I.
分类号 H03F3/213;H01L23/522;H01L23/66;H03F3/193;H03F3/217;(IPC1-7):H03H7/38 主分类号 H03F3/213
代理机构 代理人
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