| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an indium-oxide-based target which does not cause cracking and a nodule, has a sintered density as adequate as 7.0 g/cm<SP>3</SP>, and causes little secular change of a film-forming speed from the early stage of use to the final stage of use. <P>SOLUTION: This method for manufacturing the indium-oxide-based target comprises adding 2-8 mass% tin oxide having a specific surface area of 5 to 15 m<SP>2</SP>/g to an indium oxide powder having a specific surface area of 5 to 15 m<SP>2</SP>/g, into a mixed powder; pulverizing, granulating and forming the mixed powder; and sintering the product at a temperature higher than 1,300°C but not higher than 1,500°C. It is preferable to add 5-20 mass% cerium oxide powder having a specific surface area of 5 to 25 m<SP>2</SP>/g to the above mixed powder, and it is further preferable to add 1 mass% or less titanium oxide having a specific surface area of 5 to 60 m<SP>2</SP>/g. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
