| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a semiconductor light emitting element together with a thyristor with high freedom in selection of ON-voltage without increasing the number of semiconductor layers constituting the targeted semiconductor light emitting element. <P>SOLUTION: At least, the first clad layer 4 of a first conductivity type, an active layer, 5 and the second clad layer 6 of a second conductivity type, are provided on a base 1. A pair of opposite first recesses 8 forming a striped ridge 9 constituting a main current path, the current block layer 11 of the first conductivity type formed across inside first and second recesses 8 and 10, and the contact layer of the second conductivity type formed on the current block layer 11, are provided on the side of the second clad layer 6. A thyristor structure 21 is formed by laminating a light emitter by the current passing in the main current path, the contact layer 12 of the second conductivity type in the second recess, the current block layer 11 of the first conductivity type, the clad layer 6 of the second conductivity type, the active layer 5, and the first clad layer 4 of the first conductivity type. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
