| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid the difference between whose CMP polishing speeds for of an insulating film and a conductor film is small, and to provide a semiconductor device manufacturing method wherein the generative number of dishing and erosion is made small and its manufacturing process are made simple by using the polishing liquid. <P>SOLUTION: In the polishing liquid, there are added to a solvent polishing particles made of cerium oxides, first amino acid for forming a film on the surface of a silicon nitride film, a second amino acid for forming a film thereby on the surface of the silicon nitride film and for improving the wettability of the solvent whereby a polished object and a polishing pad used when polishing the object are wetted, and a nitrogen containing heterocyclic compound reacting on a conductive film. Further, the pH of the polishing liquid is so adjusted as to fall into the scope of three to four. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
