| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor substrate excellent in heat dissipation property more simply than a prior art. SOLUTION: The manufacturing method of a compound semiconductor substrate comprises a process (1) of tentatively bonding a support substrate to the epitaxial growth surface of a compound semiconductor layer substrate obtained by subjecting a compound semiconductor function layer to epitaxial growth on an original substrate, a process (2) of removing by polishing the whole of the original substrate and a part of the compound semiconductor function layer in the vicinity of the original substrate, a process (3) of bonding a high thermal conductivity substrate comprising a substance having thermal conductivity than that of the original substrate to the compound semiconductor function layer exposed by the process (1) of the compound semiconductor layer substrate, and a process (4) of separating and removing the support substrate tentatively bonded to the epitaxial growth surface. COPYRIGHT: (C)2005,JPO&NCIPI
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