| 发明名称 |
Method and process to make multiple-threshold metal gates CMOS technology |
| 摘要 |
Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.
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| 申请公布号 |
US2005106788(A1) |
申请公布日期 |
2005.05.19 |
| 申请号 |
US20040001913 |
申请日期 |
2004.12.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AMOS RICKY;BARMAK KATAYUN;BOYD DIANE C.;CABRAL CYRIL JR.;LEONG MEIKEI;KANARSKY THOMAS S.;KEDZIERSKI JAKUB T. |
| 分类号 |
H01L27/092;H01L21/28;H01L21/336;H01L21/8238;H01L21/84;(IPC1-7):H01L21/84;H01L31/039 |
主分类号 |
H01L27/092 |
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