| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the designed pattern data of a phase shifting mask. <P>SOLUTION: In the dense areas of the transferring areas 2A and 2B of a mask 1A, light transmitting patterns 4a and 4b obtained by opening a half-tone film 5 are respectively disposed. In the light transmitting patterns 4a and 4b disposed in the dense areas of the transferring areas 2A and 2B, shifters 7a and 7b are disposed so that the phases of the light rays transmitted through the adjacent light transmitting patterns 4a and 4b may be inverted by 180°. On the other hand, in the coarse areas of the transferring areas 2A and 2B, isolated light transmitting patterns 4a and 4b obtained by opening the half-tone film 5 are disposed. The shapes, dimensions, and positions of the light transmitting patterns 4a and 4b in the dense and coarse areas of the transferring areas 2A and 2B are made identical to each other, but the shifters 7a and 7b in the dense areas of the transferring areas 2A and 2B are disposed so that the shifters 7a and 7b may be inverted from each other. During the course of exposure treatment, the exposure is performed by superimposing the transferring areas 2A and 2B upon the same chip area of a photoresist film formed on a wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
