| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an SiO<SB>2</SB>film having a low dielectric constant and a low hygroscopic degree as compared with an SiO<SB>2</SB>film deposited by a conventional plasma CVD. SOLUTION: The semiconductor device has silicon oxide films 22, 24 and 26 as at least one layer among interlayer insulating films which electrically isolate wirings which form the semiconductor device. An F concentration in the silicon oxide film of the semiconductor device is more than 3 at%, and an N concentration is more than 1 at%. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2005129964(A) |
申请公布日期 |
2005.05.19 |
| 申请号 |
JP20040337705 |
申请日期 |
2004.11.22 |
| 申请人 |
TOSHIBA CORP |
发明人 |
NISHIYAMA YUKIO;NAKADA RENPEI;HAYASAKA NOBUO;OKANO HARUO;AOKI RIICHIRO;NAGAMATSU TAKAHITO;SATO AKIYOSHI;TOYOSAKI MASAO;ITO HITOSHI |
| 分类号 |
H01L21/768;H01L21/316;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
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