| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing deterioration in characteristics and reliability of a capacitor. SOLUTION: The semiconductor device includes a semiconductor substrate 100, a capacitor provided above the semiconductor substrate and including lower electrodes 116, 117 and 118 and upper electrodes 120 and 121, and a dielectric film 119 interposed between the lower electrode and the upper electrode. The upper electrode includes a first conductive film formed on the dielectric film 120 and formed of a metal oxide having a perovskite structure, and a second conductive film 121 formed on the first conductive film and including iridium. COPYRIGHT: (C)2005,JPO&NCIPI
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