发明名称 Processing apparatus and method
摘要 A processing method for forming an insulated film on a surface of a substrate to be processed, through an oxynitriding treatment includes the steps of nitriding a surface of the substrate by irradiating plasma containing nitrogen atoms onto the substrate, and oxidizing the surface of the substrate, which has been nitrided, by irradiating plasma containing oxygen atoms.
申请公布号 US2005106896(A1) 申请公布日期 2005.05.19
申请号 US20040766854 申请日期 2004.01.30
申请人 CANON KABUSHIKI KAISHA 发明人 FUKUCHI YUSUKE
分类号 H01L21/318;C23C8/34;C23C8/36;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/31;H01L21/469 主分类号 H01L21/318
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