LOW TEMPERATURE DEPOSITION OF SILICONE NITRIDE

摘要

A novel class of volatile liquid precursors based on amino substituted disilane compounds is used to form silicon nitride dielectric materials on the surface of substrates. This class of precursors overcomes the issues of high deposition temperatures and the formation of undesirable by-products that are inherent in the present art. In another aspect, methods of depositing silicon nitride films on substrates are provided.