| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide techniques to reduce the number of masks in photolithography processes used for the manufacture of a semiconductor device. <P>SOLUTION: A multilayer mask adjusted to the mask material or the accuracy required for the mask is formed. For example, when a pattern in one process is to be drawn for a plurality of shots in one mask sheet, four masks are used in four steps of a step (a) using a phase shift mask, a step (b) using a binary mask, a step (c) using a phase shift mask and a step (d) using a binary mask. However, the (a) pattern used in the (a) step and the (c) pattern in the (c) step are put together in one phase shift multilayer mask 5 according to the material of the masks. The (b) pattern used in the (b) step and the (d) patter used in the (d) step are put together in one binary multilayer mask 6. Thus, the number of masks can be reduced from 4 to 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
