| 摘要 |
PROBLEM TO BE SOLVED: To form a micro pattern that is below a resolution limit of lithography and is superior in dimensional controllability. SOLUTION: The method for forming a micro pattern includes a step wherein a film to be processed and a first film are formed on a semiconductor substrate in sequence, a step wherein a part of the first film is etched in a normal tapering manner where the groove width is made smaller toward the film to be processed until the film is exposed, a step wherein the entire surface of the groove wall is covered with a second film of which etching selection ratio is different from those of the film to be processed and the first film, a step wherein the first film aside the second film is etched almost vertically to the film to be processed while the second film is used as a mask until the film to be processed is exposed, and a mask material is left on the side wall of the second film by using the first film, a step to remove the second film by etching, and a step to etch the film to be processed while the mask material is used as a mask. COPYRIGHT: (C)2005,JPO&NCIPI
|
