| 摘要 |
PROBLEM TO BE SOLVED: To provide a dicing blade that can satisfactorily dice a wafer even when a low-dielectric constant interlayer insulating film (Low-k film) is laminated upon the wafer, and to provide a dicing method. SOLUTION: In the dicing blade 10, the grain size and degree of concentration of abrasive grains are respectively adjusted to #4,000-6,000 and 60-90, and a metal softer than nickel is used as a binding material. The front end of the outer peripheral section of the blade is formed in a V-shape over the whole circumference and, at the same time, a plurality of V-shaped notches 10B are formed in the outer peripheral section. In the dicing method, the wafer is incompletely cut by forming a V-shaped groove from the surface side of the wafer by using the dicing blade 10. Then the wafer is completely cut by cutting the uncut portion left by the incomplete cutting with a dicing blade thinner than the dicing blade 10. COPYRIGHT: (C)2005,JPO&NCIPI |
