| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplification circuit which has a wide band and a high-amplification factor characteristic and is easily designed for output saturation or a breakdown voltage of a semiconductor element. SOLUTION: The amplification circuit is provided with a first transistor 111 having the gate connected to an input terminal and having the source grounded, a second transistor 121 having the source connected to the drain of the first transistor 111 and having the gate connected to a second power supply terminal 7, and a load resistance 2 connected between the drain of the second transistor 121 and a first power supply terminal 6, wherein an input resistance value in a gate grounded state of the second transistor 121 is selected so as to be an approximate half of a combined resistance value of an external impedance 51 connected to an output of an amplifier and the load resistance 2. COPYRIGHT: (C)2005,JPO&NCIPI
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