发明名称 Method for forming thin film
摘要 It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.
申请公布号 US2005106802(A1) 申请公布日期 2005.05.19
申请号 US20040506730 申请日期 2004.09.03
申请人 NISHIYAMA NORIKAZU;OKU YOSHIAKI;TANAKA SHUNSUKE;UEYAMA KOREKAZU 发明人 NISHIYAMA NORIKAZU;OKU YOSHIAKI;TANAKA SHUNSUKE;UEYAMA KOREKAZU
分类号 H01L21/316;H01L21/8246;H01L27/115;(IPC1-7):H01L21/823 主分类号 H01L21/316
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