| 摘要 |
A chemical mechanical polishing pad ( 200 ) that includes a polishing layer ( 204 ) having a polishing region ( 208 ) and containing a plurality of grooves ( 212 ) extending at least partially into the polishing region. During polishing, the grooves contain a slurry ( 236 ) that facilitates polishing. Each groove includes a plurality of mixing structures ( 220 ) configured to cause mixing of slurry located in a lower portion ( 240 ) of the groove with slurry located in the upper portion ( 244 ) of the groove.
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