发明名称 Vorrichtung und Verfahren für eine integrale Bypassdiode in Solarzelle
摘要 <p>Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or "turning on" the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.</p>
申请公布号 DE10297371(T5) 申请公布日期 2005.05.19
申请号 DE2002197371T 申请日期 2002.10.24
申请人 EMCORE CORP., SOMERSET 发明人 SHARPS, PAUL R.;ALKEN, DANIEL J.;COLLINS, DOUG;STAN, MARK A.
分类号 H01L31/04;H01L27/142;H01L31/00;H01L31/0687;H01L31/0725;H01L31/0735;(IPC1-7):H01L31/04;H01L31/06 主分类号 H01L31/04
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