FERROELECTRIC CAPACITOR DEVICES AND A METHOD FOR COMPENSATING FOR DAMAGE TO A CAPACITOR CAUSED BY ETCHING

摘要

A ferroelectric capacitor (17) in which damage caused by etching exposed faces (14) of a ferroelectric layer (2) of the capacitor is compensated by depositing a seeding layer (18) of ferroelectric material such as PZT on one or more exposed faces of the ferroelectric layer and depositing an electrode layer (16) made of conductive material such as platinum on the seeding layer. An oxygen annealing recovery process is applied to the device. The seeding layer can transform the phase of the damaged surfaces from amorphous to crystalline during the recovery annealing process and, at the same time, provide the damaged surfaces of the ferroelectric layer with missing element(s), for example lead. The oxygen necessary for recovery of the damage may be obtained through the platinum layer from the oxygen atmosphere.