发明名称
摘要 PROBLEM TO BE SOLVED: To simultaneously satisfy three requests of the speeding-up of plasma treatment, the increase of the quality of the plasma treating face and the uniformization of the plasma treatment in plasma treatment of film formation, working, surface treatment or the like. SOLUTION: In a 1st space SC as the opposite part between at least a part of a 1st electrode 2 and a part of a 2nd electrode 3, plasma of a small size is generated. To the plasma, the 2nd electrode 3 and a substrate 50 mounted on the surface are moved, and uniform plasma treatment is executed to the whole face of the substrate. A cover body 23 composing a main gas flow passage FR together with the 2st electrode 2 and the 2nd electrode 3 or the substrate 50 without being contacted with the 2nd electrode 3 and the substrate 50 is formed. The 1st electrode 2, the 2nd electrode 3 and the cover body 23 are arranged in such a manner that a rapid change is not applied to the flow line of the main gas flow passage FR of gas for plasma treatment going toward a communicating exhaust port 27 of the cover body 23 through the 1st space SC from a communicating introduction port 26 of the cover body 23, the plasma space is stably fed with gas for plasma treatment of a large flow rate, and the gas after the treatment is exhausted at a high speed.
申请公布号 JP3649378(B2) 申请公布日期 2005.05.18
申请号 JP19990240627 申请日期 1999.08.26
申请人 发明人
分类号 H01L21/302;C23C16/505;H01L21/205;H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/302
代理机构 代理人
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