发明名称 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which ensures small surface roughness and line edge roughness during etching and has excellent resolution and a wide focal-depth range, and to provide a method for forming a resist pattern. <P>SOLUTION: The positive resist composition contains a resin (A), an acid generating agent (B) and an organic solvent (C). The resin ingredient (A) has both of a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester, and has a structural unit containing a polycyclic group-containing acid-dissociating dissolution-inhibiting group and derived from a (meth)acrylate ester, a structural unit containing a lactone-containing monocyclic or polycyclic group and derived from a (meth)acrylate ester, and a structural unit containing a hydroxyl group-containing polycyclic group and derived from a (meth)acrylate ester, and further contains a structural unit (a4) containing a polycyclic group excluding the above acid-dissociating dissolution-inhibiting group, the above lactone-containing monocyclic group or polycyclic group and the above hydroxyl group-containing polycyclic group, and derived from a (meth)acrylate ester. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005128572(A) 申请公布日期 2005.05.19
申请号 JP20050001369 申请日期 2005.01.06
申请人 TOKYO OHKA KOGYO CO LTD 发明人 IWAI TAKESHI;KUBOTA NAOTAKA;FUJIMURA SATOSHI;MIYAIRI YOSHIKAZU;HANEDA HIDEO
分类号 G03F7/039;C08F20/18;G03F7/004;H01L21/027 主分类号 G03F7/039
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