| 摘要 |
PROBLEM TO BE SOLVED: To provide methods and components for the chemical mechanical polishing (CMP) of a semiconductor substrate (100), the post CMP storage of the semiconductor substrate (100), and the post CMP washing of the semiconductor substrate (100). SOLUTION: A surface active agent is used for the methods and the components and a deactivator is used in certain cases. The methods and the components are particularly proper for polishing, storing and washing the semiconductor substrate (100) containing a hydrophobic surface. COPYRIGHT: (C)2005,JPO&NCIPI
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