发明名称 |
Electrode forming method, capacitor element and fabricating method therefor |
摘要 |
An electrode forming method includes the steps of: forming a conductive film on a substrate; forming, on the conductive film, a first mask pattern extending in a first direction; forming a conductive film pattern by etching the conductive film using the first mask pattern; removing the first mask pattern existing on the conductive film pattern; forming, on the substrate and on the conductive film pattern, a second mask pattern extending in a second direction different from the first direction; and forming an electrode by etching the conductive film pattern using the second mask pattern.
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申请公布号 |
US2005104113(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040986316 |
申请日期 |
2004.11.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIKAWA TAKUMI;HIRANO HIROSHIGE |
分类号 |
H01L21/768;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):H01L21/00;H01L21/824;H01L27/108;H01L29/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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