发明名称 Electrode forming method, capacitor element and fabricating method therefor
摘要 An electrode forming method includes the steps of: forming a conductive film on a substrate; forming, on the conductive film, a first mask pattern extending in a first direction; forming a conductive film pattern by etching the conductive film using the first mask pattern; removing the first mask pattern existing on the conductive film pattern; forming, on the substrate and on the conductive film pattern, a second mask pattern extending in a second direction different from the first direction; and forming an electrode by etching the conductive film pattern using the second mask pattern.
申请公布号 US2005104113(A1) 申请公布日期 2005.05.19
申请号 US20040986316 申请日期 2004.11.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MIKAWA TAKUMI;HIRANO HIROSHIGE
分类号 H01L21/768;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):H01L21/00;H01L21/824;H01L27/108;H01L29/76 主分类号 H01L21/768
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