发明名称 |
High temperature memory device |
摘要 |
Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.
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申请公布号 |
US2005104104(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040992144 |
申请日期 |
2004.11.18 |
申请人 |
HALLIBURTON ENERGY SERVICES, INC. |
发明人 |
SCHULTZ ROGER L.;FREEMAN JAMES J. |
分类号 |
G11C11/22;H01L;H01L27/10;H01L27/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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