摘要 |
A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region. |
申请人 |
INTERNATIONAL BUSINESS MACHINES;CHOE, KWANG, SU;FOGEL, KEITH, E.;MAURER, SIEGFRIED, L.;MITCHELL, RYAN, M.;SADANA, DEVENDRA, K. |
发明人 |
CHOE, KWANG, SU;FOGEL, KEITH, E.;MAURER, SIEGFRIED, L.;MITCHELL, RYAN, M.;SADANA, DEVENDRA, K. |