| 摘要 |
<p>A tantalum sputtering target characterized in that on the surface of tantalum target, the area ratio of crystal with any of orientations (100), (111) and (110) providing that the sum of all crystal orientations is 1 does not exceed 0.5. Thus, there can be obtained a target for tantalum sputtering excelling in film formation characteristics such that the film formation speed is high, the uniformity of the film being excellent, with the occurrence of arcing and pulverization reduced.</p> |
