Magnetic tunneling junction cell having free magnetic layer with low magnetic moment and magnetic random access memory having the same

摘要

A magnetic tunneling junction(MTJ) cell including a free magnetic layer having a low magnetic moment and a magnetic random access memory (MRAM) comprising the MTJ cell are provided. The MTJ cell of the MRAM includes: a lower electrode (10); and a lower magnetic layer (12, 14, 16), a tunneling layer (18), an upper magnetic layer (20) and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer of 5 nm or less in thickness. The MTJ cell may have an aspect ratio of 2 or less and the free magnetic layer may have a magnetic moment of 800 emu/cm<3> or less. <IMAGE>