| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method for conducting high aspect ratio etching by the use of plasma. SOLUTION: The etching method is adapted for etching a group III-V based compound and comprises steps of forming a mask on the group III-V based compound, placing the group III-V based compound and the mask into a reactor applied with pressure between about 2 mTorr to about 20 mTorr, introducing a first gas selected from the group of HBr, HI, and IBr into the reactor, introducing a second gas of BCl<SB>3</SB>into the reactor, and exposing the group III-V based compound to gas plasma containing the first and second gases and etching smooth sidewalls having high aspect ratios. COPYRIGHT: (C)2005,JPO&NCIPI
|
