发明名称 MAGNETIC SWITCHING ELEMENT AND MEMORY DEVICE USING IT
摘要 PROBLEM TO BE SOLVED: To provide a method for inverting the magnetized state in a magnetic body with high energy conversion efficiency, a magnetic switching element which substantially reduces energy consumption of the entire magnetic device that changes the magnetized state provided by an external magnetic field, and a memory device using the magnetic switching element. SOLUTION: A magnetic switching element comprises at least one transfer body (1), at least one electrode (2), and at least one free magnetic body (3). The transfer body (1) of the magnetic switching element is made of a perovskite compound containing at least a rare-earth element and an alkaline earth metal. On the transfer body (1), the electrode (2) and the free magnetic body (3) are placed so that they are in parallel with each other, and that they are separated from each other. At least one free magnetic body (3) is magnetically coupled to the transfer body (1), and the transfer body (1) is transferred to a ferromagnetic state or an antiferromagnetic state through injection/induction of electrons/holes, thereby changing at least one magnetization direction of the free magnetic body (3). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005129908(A) 申请公布日期 2005.05.19
申请号 JP20040267239 申请日期 2004.09.14
申请人 MATSUSHITA ELECTRIC IND CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 ODAKAWA AKIHIRO;SATO HIROSHI;YAMADA JUICHI;ISHII YUJI;INOUE AKIRA;AKAHO HIROSHI;KAWASAKI MASASHI;TAKAGI HIDENORI
分类号 G11B5/39;H01L21/8246;H01L27/105;H01L29/82;H01L43/08;(IPC1-7):H01L29/82 主分类号 G11B5/39
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