发明名称 |
Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
摘要 |
A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.
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申请公布号 |
US2005104072(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040916113 |
申请日期 |
2004.08.11 |
申请人 |
SLATER DAVID B.JR.;EDMOND JOHN;DONOFRIO MATTHEW |
发明人 |
SLATER DAVID B.JR.;EDMOND JOHN;DONOFRIO MATTHEW |
分类号 |
H01L21/027;H01L21/04;H01L21/263;H01L21/268;H01L33/00;H01L33/34;H01L33/40;(IPC1-7):H01L21/00;H01L29/15 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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